题目：Feature-scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics

报告人: 王冬  复旦大学

时间： 2014年5月16日 下午 3:00-4:00

地点： 管理科研楼 1216室

报告摘要:
Chemical mechanical polishing (CMP) is a key process widely used in semiconductor manufacturing industry to provide local and global planarity of silicon wafers. Although CMP has been extensively utilized in industry, the polishing mechanisms are still not well understood. This is due to the complex chemical and mechanical interactions at wafer-pad interface and the difficulties of in-situ observations at feature scales. In this presentation, a comprehensive investigation of the mechanisms of material removal in CMP processes by the smoothed particle hydrodynamics (SPH) method will be addressed. The feature-scale behaviours of slurry flow, rough pad, wafer defects, moving solid boundaries, slurry-abrasive interactions, and abrasive collisions are modelled and simulated. Compared with previous work on CMP simulations, this work incorporate more realistic physical aspects of the CMP process, especially the effect of abrasive concentration in the slurry flows. The preliminary results on slurry flow in CMP provide microscopic insights on the experimental data of the relation between the removal rate and abrasive concentration and demonstrate that SPH is a suitable method for the research of CMP processes.